Gallium Nitride Gan Semiconductor Device Market Size And Share

Report Code : TIPRE00039440
Category : Electronics and Semiconductor

No. of Pages : 150

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Marktgröße und Marktanteil von Galliumnitrid (GaN)-Halbleiterbauelementen bis 2025 – 2031

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Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

CAGR (2025 - 2031)
5.5%
Market Size 2024
US$ XX million
Market Size 2031
US$ XX Million

Report Coverage

Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope

Key future trends
Detailed PEST/Porter’s Five Forces and SWOT analysis

Industry landscape and competition analysis & recent developments
Detailed company profiles

Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

Fujitsu Ltd.
Efficient Power Conversion Corporation
Transphorm, Inc.
Infineon Technologies AG
NXP Semiconductors.
Qorvo, Inc
Texas Instruments Incorporated
Toshiba Corporation
GaN Systems
NTT Advanced Technology Corporation.

Regional Overview

Nordamerika
Europa
Asien-Pazifik
Süd- und Mittelamerika
Naher Osten und Afrika

Market Segmentation

By Typ

Optohalbleiter
HF-Halbleiter
Leistungshalbleiter

By Gerät

diskret
integriert
HEMT
MMIC

By Anwendung

Beleuchtung und Laser
Antriebssysteme

By Spannungsbereich

weniger als 100
100–500 V
mehr als 500 V