Gallium Nitride Gan Semiconductor Device Market Size And Share

Report Code : TIPRE00039440
Category : Electronics and Semiconductor

No. of Pages : 150

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Análisis de la cuota de mercado y oportunidades de dispositivos semiconductores de nitruro de galio (GaN) 2025-2031

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Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

CAGR (2025 - 2031)
5.5%
Market Size 2024
US$ XX million
Market Size 2031
US$ XX Million

Report Coverage

Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope

Key future trends
Detailed PEST/Porter’s Five Forces and SWOT analysis

Industry landscape and competition analysis & recent developments
Detailed company profiles

Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

Fujitsu Ltd.
Efficient Power Conversion Corporation
Transphorm, Inc.
Infineon Technologies AG
NXP Semiconductors.
Qorvo, Inc
Texas Instruments Incorporated
Toshiba Corporation
GaN Systems
NTT Advanced Technology Corporation.

Regional Overview

Norteamérica
Europa
Asia-Pacífico
América del Sur y Central
Oriente Medio y África

Market Segmentation

By Tipo

optosemiconductor
semiconductor de RF
semiconductor de potencia

By Dispositivo

discreto
integrado
HEMT
MMIC

By Aplicación

Iluminación y láseres
accionamientos de potencia

By Rango de voltaje

menos de 100
V100-500 V
más de 500 V