Gallium Nitride Gan Semiconductor Device Market Size And Share

Report Code : TIPRE00039440
Category : Electronics and Semiconductor

No. of Pages : 150

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Analyse des parts de marché et des principaux résultats du marché des semi-conducteurs au nitrure de gallium (GaN) d'ici 2025-2031

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Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

CAGR (2025 - 2031)
5.5%
Market Size 2024
US$ XX million
Market Size 2031
US$ XX Million

Report Coverage

Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope

Key future trends
Detailed PEST/Porter’s Five Forces and SWOT analysis

Industry landscape and competition analysis & recent developments
Detailed company profiles

Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

Fujitsu Ltd.
Efficient Power Conversion Corporation
Transphorm, Inc.
Infineon Technologies AG
NXP Semiconductors.
Qorvo, Inc
Texas Instruments Incorporated
Toshiba Corporation
GaN Systems
NTT Advanced Technology Corporation.

Regional Overview

North America
Europe
Asia-Pacific
South and Central America
Middle East and Africa

Market Segmentation

By Type

opto-semiconducteur
semi-conducteur RF
semi-conducteur de puissance

By Dispositif

discret
intégré
HEMT
MMIC

By Application

éclairage et lasers
entraînements de puissance

By Plage de tension

moins de 100 V
100-500 V
plus de 500 V