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Gallium Nitride Gan Semiconductor Device Market Scope And Analysis

  • Report Code : TIPRE00039440
  • Category : Electronics and Semiconductor
  • No. of Pages : 150
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Analisi del mercato dei dispositivi semiconduttori al nitruro di gallio (GaN) e dei concorrenti entro il 2025-2031

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Gallium Nitride (GaN) Semiconductor Device Market Report Gallium Nitride (GaN) Semiconductor Device Market Size and Share Gallium Nitride (GaN) Semiconductor Device Market Scope and Analysis

Gallium Nitride (GaN) Semiconductor Device Market Report Scope

Report Attribute Details
Market size in 2024 US$ XX million
Market Size by 2031 US$ XX Million
Global CAGR (2025 - 2031) 5.5%
Historical Data 2021-2023
Forecast period 2025-2031
Segments Covered By Tipo
  • Opto-semiconduttore
  • Semiconduttore RF
  • Semiconduttore di potenza
By Dispositivo
  • discreto
  • integrato
  • HEMT
  • MMIC
By Applicazione
  • Illuminazione e Laser
  • Azionamenti Elettrici
By Intervallo di tensione
  • meno di 100
  • V100-500 V
  • più di 500 V
Regions and Countries Covered Nord America
  • Stati Uniti
  • Canada
  • Messico
Europa
  • Regno Unito
  • Germania
  • Francia
  • Russia
  • Italia
  • resto Europa
Asia-Pacifico
  • Cina
  • India
  • Giappone
  • Australia
  • resto delAsia-Pacifico
Sud e Centro America
  • Brasile
  • Argentina
  • resto del Sud e Centro America
Medio Oriente e Africa
  • Sudafrica
  • Arabia Saudita
  • Emirati Arabi Uniti
  • resto del Medio Oriente e Africa
Market leaders and key company profiles
  • Fujitsu Ltd.
  • Efficient Power Conversion Corporation
  • Transphorm, Inc.
  • Infineon Technologies AG
  • NXP Semiconductors.
  • Qorvo, Inc
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • GaN Systems
  • NTT Advanced Technology Corporation.
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