Gallium Nitride Gan Semiconductor Device Market Size And Share

  • Report Code : TIPRE00039440
  • Category : Electronics and Semiconductor
  • No. of Pages : 150
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Dimensioni, segmenti e analisi del mercato dei dispositivi semiconduttori al nitruro di gallio (GaN) entro il 2025-2031

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Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

  • CAGR (2025 - 2031)
    5.5%
  • Market Size 2024
    US$ XX million
  • Market Size 2031
    US$ XX Million

Report Coverage

  • Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope
  • Key future trends
  • Detailed PEST/Porter’s Five Forces and SWOT analysis
  • Industry landscape and competition analysis & recent developments
  • Detailed company profiles
  • Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

  • Fujitsu Ltd.
  • Efficient Power Conversion Corporation
  • Transphorm, Inc.
  • Infineon Technologies AG
  • NXP Semiconductors.
  • Qorvo, Inc
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • GaN Systems
  • NTT Advanced Technology Corporation.

Regional Overview

  • Nord America
  • Europa
  • Asia-Pacifico
  • Sud e Centro America
  • Medio Oriente e Africa

Market Segmentation

By Tipo
  • Opto-semiconduttore
  • Semiconduttore RF
  • Semiconduttore di potenza
By Dispositivo
  • discreto
  • integrato
  • HEMT
  • MMIC
By Applicazione
  • Illuminazione e Laser
  • Azionamenti Elettrici
By Intervallo di tensione
  • meno di 100
  • V100-500 V
  • più di 500 V