窒化ガリウム（GaN）半導体デバイス市場シェア分析と機会 2025-2031
Gallium Nitride (GaN) Semiconductor Device Market Report Analysis
Gallium Nitride (GaN) Semiconductor Device Market
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CAGR (2025 - 2031)5.5% -
Market Size 2024
US$ XX million -
Market Size 2031
US$ XX Million
Report Coverage
- Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope
- Key future trends
- Detailed PEST/Porter’s Five Forces and SWOT analysis
- Industry landscape and competition analysis & recent developments
- Detailed company profiles
- Global and regional market analysis covering key market trends, major players, regulations, and recent market developments
Key Players
- Fujitsu Ltd.
- Efficient Power Conversion Corporation
- Transphorm, Inc.
- Infineon Technologies AG
- NXP Semiconductors.
- Qorvo, Inc
- Texas Instruments Incorporated
- Toshiba Corporation
- GaN Systems
- NTT Advanced Technology Corporation.
Regional Overview
- 北米
- ヨーロッパ
- アジア太平洋
- 南米および中米
- 中東およびアフリカ
Market Segmentation
By タイプ
- 光半導体
- RF半導体
- パワー半導体
By デバイス
- ディスクリート
- インテグレーテッド
- HEMT
- MMIC
By アプリケーション
- 照明とレーザー
- パワードライブ
By 電圧範囲
- 100V未満
- 100～500V
- 500V以上
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