Gallium Nitride Gan Semiconductor Device Market Size And Share

  • Report Code : TIPRE00039440
  • Category : Electronics and Semiconductor
  • No. of Pages : 150
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질화갈륨(GaN) 반도체 소자 시장 점유율 분석 및 기회 [2025-2031]

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Gallium Nitride (GaN) Semiconductor Device Market Report Gallium Nitride (GaN) Semiconductor Device Market Scope and Analysis Gallium Nitride (GaN) Semiconductor Device Market Size and Share

Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

  • CAGR (2025 - 2031)
    5.5%
  • Market Size 2024
    US$ XX million
  • Market Size 2031
    US$ XX Million

Report Coverage

  • Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope
  • Key future trends
  • Detailed PEST/Porter’s Five Forces and SWOT analysis
  • Industry landscape and competition analysis & recent developments
  • Detailed company profiles
  • Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

  • Fujitsu Ltd.
  • Efficient Power Conversion Corporation
  • Transphorm, Inc.
  • Infineon Technologies AG
  • NXP Semiconductors.
  • Qorvo, Inc
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • GaN Systems
  • NTT Advanced Technology Corporation.

Regional Overview

  • 북미
  • 유럽
  • 아시아 태평양
  • 남미 및 중앙아메리카
  • 중동 및 아프리카

Market Segmentation

By 유형
  • 광반도체
  • RF 반도체
  • 전력 반도체
By 장치
  • 개별
  • 통합
  • HEMT
  • MMIC
By 응용 분야
  • 조명 및 레이저
  • 전력 구동
By 전압 범위
  • 100V 미만
  • 100~500V
  • 500V 초과