Gallium Nitride Gan Semiconductor Device Market Size And Share

  • Report Code : TIPRE00039440
  • Category : Electronics and Semiconductor
  • No. of Pages : 150
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2025-2031年氮化镓(GaN)半导体器件市场规模、份额及预测

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Gallium Nitride (GaN) Semiconductor Device Market Report Analysis

Gallium Nitride (GaN) Semiconductor Device Market

  • CAGR (2025 - 2031)
    5.5%
  • Market Size 2024
    US$ XX million
  • Market Size 2031
    US$ XX Million

Report Coverage

  • Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope
  • Key future trends
  • Detailed PEST/Porter’s Five Forces and SWOT analysis
  • Industry landscape and competition analysis & recent developments
  • Detailed company profiles
  • Global and regional market analysis covering key market trends, major players, regulations, and recent market developments

Key Players

  • Fujitsu Ltd.
  • Efficient Power Conversion Corporation
  • Transphorm, Inc.
  • Infineon Technologies AG
  • NXP Semiconductors.
  • Qorvo, Inc
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • GaN Systems
  • NTT Advanced Technology Corporation.

Regional Overview

  • 北美
  • 欧洲
  • 亚太地区
  • 南美洲和中美洲
  • 中东和非洲

Market Segmentation

By 类型
  • 光电半导体
  • 射频半导体
  • 功率半导体
By 器件
  • 分立器件
  • 集成器件
  • HEMT 器件
  • MMIC 器件
By 应用
  • 照明和激光
  • 电力驱动
By 电压范围
  • 小于100V
  • 100-500V
  • 大于500V