GaN Power Device Market 2028 By Device Type, RF Power Device, Voltage Range, Application, Vertical and Geography | The Insight Partners

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GaN Power Device Market Forecast to 2028 - COVID-19 Impact and Global Analysis By Device Type (Discrete Power Device, Integrated Power Device); RF Power Device (Discrete RF Power Device, Integrated RF Power Device); Voltage Range (Less than 200 Volt, 200â€"600 Volt, More than 600 Volt); Application (Power Drives, Supply and Inverter, Radio Frequency); Vertical (Telecommunications, Industrial, Automotive, Renewables, Consumer and Enterprise) and Geography

Report Code: TIPRE00019101 | No. of Pages: 150 | Category: Electronics and Semiconductor | Status: Upcoming


Gallium nitride (GaN) transistors have evolved as an enhanced performance substitute of silicon-based transistors, owing to their ability of fabricating more compact devices for a given resistance value and breakdown voltage as compared to silicon devices. These power devices can attain extremely low-resistance and high-frequency switching. These properties are exploited in high-efficiency power supplies, electric vehicle (EV), hybrid electric vehicle (HEV), photovoltaic inverters, and RF switching. Moreover, these devices are applicable in power supplies for server, IT equipment, high-efficiency & stable power supplies, and EV & HEV devices. Therefore, the increased application influences the GaN power device market growth.


Some of the factors that drive the market growth include decrease in prices of GaN devices, rise in demand for GaN devices for wireless charging, increase in installation of GaN devices in electric vehicle, and surge in requirement of GaN devices for commercial RF applications. However, lack of availability of GaN material restrains the market growth. Moreover, government initiatives in HVDC and smart grid are anticipated to provide lucrative opportunities for the market growth during the forecast period.


The "Global GaN Power Device Market Analysis to 2028" is a specialized and in-depth study of the GaN power device market with a special focus on the global market trend analysis. The report aims to provide an overview of GaN power device market with detailed market segmentation by device type, RF power device, voltage range, application, vertical. The global GaN power device market expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading GaN power device market player and offers key trends and opportunities in the GaN power device market.


The global GaN power device market is segmented on the basis of device type, RF power device, voltage range, application, vertical. On the basis of device type, market is segmented as discrete power device, integrated power device. On the basis of RF power device, market is segmented as discrete RF power device, integrated RF power device. On the basis of voltage range, market is segmented as less than 200 volt, 200â€"600 volt, more than 600 volt. On the basis of application, market is segmented as power drives, supply and inverter, radio frequency. On the basis of vertical, market is segmented as telecommunications, industrial, automotive, renewables, consumer and enterprise


The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global GaN power device market based on various segments. It also provides market size and forecast estimates from year 2020 to 2028 with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America. The GaN power device market by each region is later sub-segmented by respective countries and segments. The report covers analysis and forecast of 18 countries globally along with current trend and opportunities prevailing in the region.

The report analyzes factors affecting GaN power device market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors effecting the GaN power device market in these regions.

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The reports cover key developments in the GaN power device market organic and inorganic growth strategies. Various companies are focusing on organic growth strategies such as product launches, product approvals and others such as patents and events. Inorganic growth strategies activities witnessed in the market were acquisitions, and partnership & collaborations. These activities have paved way for expansion of business and customer base of market players. The market players from GaN power device market are anticipated to lucrative growth opportunities in the future with the rising demand for GaN power device market. Below mentioned is the list of few companies engaged in the GaN power device market.

The report also includes the profiles of key GaN power device market companies along with their SWOT analysis and market strategies. In addition, the report focuses on leading industry players with information such as company profiles, components and services offered, financial information of last 3 years, key development in past five years.

  •   CREE
  •   Infineon
  •   Qorvo
  •   Macom
  •   Microsemi
  •   Mitsubishi Electric
  •   Efficient Power Conversion
  •   GaN Systems
  •   Navitas Semiconductor
  •   Toshiba

The Insight Partner's dedicated research and analysis team consist of experienced professionals with advanced statistical expertise and offer various customization options in the existing study.

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The List of Companies

2. Infineon
3. Qorvo
4. Macom
5. Microsemi
6. Mitsubishi Electric
7. Efficient Power Conversion
8. GaN Systems
9. Navitas Semiconductor
10. Toshiba
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