GaN Epitaxial Wafers Market Size and Forecasts (2021 - 2031), Global and Regional Share, Trends, and Growth Opportunity Analysis
MARKET INTRODUCTION
A wafer of semiconducting material formed through epitaxial growth (epitaxy) for application in photonics, microelectronics, spintronics, or photovoltaics is known as an epitaxial wafer. Gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminium, nitrogen, phosphorus, or arsenic make up the epitaxial layers. GaN Substrate's primary advantages are high electron mobility, reduced switching losses, and fewer lattice mismatches, which are driving its usage in fields including power electronics and optoelectronics.
MARKET DYNAMICS
Due to its ability to work at high frequency and high temperature, GaN is widely used in radio frequency devices, light-emitting diodes (LEDs), and power electronics. The market for GaN epitaxial wafers is being boosted by the increasing popularity of LEDs. Furthermore, advances in GaN technology have resulted in the creation of efficient GaN substrates with low defect density and free macro defects. As a result, GaN substrates are increasingly being used to make LEDs with wafer diameters ranging from 2 inches to 6 and 8 inches. During the forecast period, the GaN epitaxial wafers market is expected to rise due to the increasing adoption of LEDs.
MARKET SCOPE
The "Global GaN Epitaxial Wafers Market Analysis to 2028" is a specialized and in-depth study of the GaN Epitaxial Wafers Market with a special focus on the global market trend analysis. The report aims to provide an overview of the GaN Epitaxial Wafers Market with detailed market segmentation by product type, wafer size, application, end-user industry, and geography. The global GaN Epitaxial Wafers Market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading GaN Epitaxial Wafers Market players and offers key trends and opportunities in the GaN Epitaxial Wafers Market.
MARKET SEGMENTATION
The global GaN Epitaxial Wafers Market is segmented on the basis of product type, wafer size, application, end-user industry. On the basis of product type, the market is segmented into GAN homoepitaxial epitaxial wafer and GAN heteroepitaxial epitaxial wafer. Based on wafer size the market is segmented into the 2-inch wafer, 4-inch wafer, and 8-inch and above wafer. Based on application the market is segmented into LEDs, lasers, radiofrequency devices, power drives, transistors, and others. Based on the end-user industry, the market is segmented into IT AND telecommunications, industrial, automotive, renewable, consumer electronics, military, defense and aerospace, medical and healthcare, and others.
REGIONAL FRAMEWORK
The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global GaN Epitaxial Wafers Market based on various segments. It also provides market size and forecast estimates from year 2017 to 2028 with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America. The GaN Epitaxial Wafers Market by each region is later sub-segmented by respective countries and segments. The report covers analysis and forecast of 18 countries globally along with current trend and opportunities prevailing in the region.
The report analyzes factors affecting GaN Epitaxial Wafers Market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors effecting the GaN Epitaxial Wafers Market in these regions.
By Product Type
By Wafer Size
By Application
By End-user Industry
MARKET PLAYERS
The reports cover key developments in the GaN Epitaxial Wafers Market as organic and inorganic growth strategies. Various companies are focusing on organic growth strategies such as product launches, product approvals and others such as patents and events. Inorganic growth strategies activities witnessed in the market were acquisitions, and partnership & collaborations. These activities have paved way for expansion of business and customer base of market players. The market players from GaN Epitaxial Wafers Market are anticipated to lucrative growth opportunities in the future with the rising demand for GaN Epitaxial Wafers Market. Below mentioned is the list of few companies engaged in the GaN Epitaxial Wafers Market.
The report also includes the profiles of key GaN Epitaxial Wafers Market companies along with their SWOT analysis and market strategies. In addition, the report focuses on leading industry players with information such as company profiles, components and services offered, financial information of last 3 years, key development in past five years.
A wafer of semiconducting material formed through epitaxial growth (epitaxy) for application in photonics, microelectronics, spintronics, or photovoltaics is known as an epitaxial wafer. Gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminium, nitrogen, phosphorus, or arsenic make up the epitaxial layers. GaN Substrate's primary advantages are high electron mobility, reduced switching losses, and fewer lattice mismatches, which are driving its usage in fields including power electronics and optoelectronics.
MARKET DYNAMICS
Due to its ability to work at high frequency and high temperature, GaN is widely used in radio frequency devices, light-emitting diodes (LEDs), and power electronics. The market for GaN epitaxial wafers is being boosted by the increasing popularity of LEDs. Furthermore, advances in GaN technology have resulted in the creation of efficient GaN substrates with low defect density and free macro defects. As a result, GaN substrates are increasingly being used to make LEDs with wafer diameters ranging from 2 inches to 6 and 8 inches. During the forecast period, the GaN epitaxial wafers market is expected to rise due to the increasing adoption of LEDs.
MARKET SCOPE
The "Global GaN Epitaxial Wafers Market Analysis to 2028" is a specialized and in-depth study of the GaN Epitaxial Wafers Market with a special focus on the global market trend analysis. The report aims to provide an overview of the GaN Epitaxial Wafers Market with detailed market segmentation by product type, wafer size, application, end-user industry, and geography. The global GaN Epitaxial Wafers Market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading GaN Epitaxial Wafers Market players and offers key trends and opportunities in the GaN Epitaxial Wafers Market.
MARKET SEGMENTATION
The global GaN Epitaxial Wafers Market is segmented on the basis of product type, wafer size, application, end-user industry. On the basis of product type, the market is segmented into GAN homoepitaxial epitaxial wafer and GAN heteroepitaxial epitaxial wafer. Based on wafer size the market is segmented into the 2-inch wafer, 4-inch wafer, and 8-inch and above wafer. Based on application the market is segmented into LEDs, lasers, radiofrequency devices, power drives, transistors, and others. Based on the end-user industry, the market is segmented into IT AND telecommunications, industrial, automotive, renewable, consumer electronics, military, defense and aerospace, medical and healthcare, and others.
REGIONAL FRAMEWORK
The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global GaN Epitaxial Wafers Market based on various segments. It also provides market size and forecast estimates from year 2017 to 2028 with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America. The GaN Epitaxial Wafers Market by each region is later sub-segmented by respective countries and segments. The report covers analysis and forecast of 18 countries globally along with current trend and opportunities prevailing in the region.
The report analyzes factors affecting GaN Epitaxial Wafers Market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors effecting the GaN Epitaxial Wafers Market in these regions.
GaN Epitaxial Wafers Market Report Analysis
GaN Epitaxial Wafers Market
-
CAGR (2023 - 2031)XX% -
Market Size 2023
US$ XX Million -
Market Size 2031
US$ XX Million
Report Coverage
- Market size and forecast at global, regional, and country levels for all the key market segments covered under the scope
- Key future trends
- Detailed PEST/Porter’s Five Forces and SWOT analysis
- Industry landscape and competition analysis & recent developments
- Detailed company profiles
- Global and regional market analysis covering key market trends, major players, regulations, and recent market developments
Key Players
- RF Globalnet
- Aixtron
- EpiGaN nv
- SweGaN
- NTT Advanced Technology Corporation
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- Toshiba Infrastructure Systems and Solutions Corporation
- Koninklijke Philips N.V.
Regional Overview
- North America
- Europe
- Asia-Pacific
- South and Central America
- Middle East and Africa
Market Segmentation
By Product Type
- GaN Homoepitaxial Epitaxial Wafer
- GaN Heteroepitaxial Epitaxial Wafer
By Wafer Size
- 2-Inch Wafer
- 4-Inch Wafer
- 8-Inch and Above Wafe
By Application
- LEDs
- Lasers
- Radio Frequency Devices
- Power Drives
- Transistors
- Others
By End-user Industry
- IT and Telecommunications
- Industrial
- Automotive
- Renewable
- Consumer Electronics
- Military
- Defense and Aerospace
- Medical and Healthcare
- Others
- Sample PDF showcases the content structure and the nature of the information with qualitative and quantitative analysis.
The reports cover key developments in the GaN Epitaxial Wafers Market as organic and inorganic growth strategies. Various companies are focusing on organic growth strategies such as product launches, product approvals and others such as patents and events. Inorganic growth strategies activities witnessed in the market were acquisitions, and partnership & collaborations. These activities have paved way for expansion of business and customer base of market players. The market players from GaN Epitaxial Wafers Market are anticipated to lucrative growth opportunities in the future with the rising demand for GaN Epitaxial Wafers Market. Below mentioned is the list of few companies engaged in the GaN Epitaxial Wafers Market.
The report also includes the profiles of key GaN Epitaxial Wafers Market companies along with their SWOT analysis and market strategies. In addition, the report focuses on leading industry players with information such as company profiles, components and services offered, financial information of last 3 years, key development in past five years.
- Aixtron
- ALLOS Semiconductors GmbH
- EpiGaN nv
- Infineon Technologies AG
- Koninklijke Philips N.V.
- Mitsubishi Electric Corporation
- NTT Advanced Technology Corporation
- RF Globalnet
- SweGaN
- Toshiba Infrastructure Systems and Solutions Corporation
GaN Epitaxial Wafers Market Report Scope
| Report Attribute | Details |
|---|---|
| Market size in 2023 | US$ XX Million |
| Market Size by 2031 | US$ XX Million |
| Global CAGR (2023 - 2031) | XX% |
| Historical Data | 2021-2022 |
| Forecast period | 2024-2031 |
| Segments Covered |
By Product Type
|
| Regions and Countries Covered | North America
|
| Market leaders and key company profiles |
- Sample PDF showcases the content structure and the nature of the information with qualitative and quantitative analysis.
Report Coverage
Revenue forecast, Company Analysis, Industry landscape, Growth factors, and Trends
Segment Covered
This text is related
to segments covered.
Regional Scope
North America, Europe, Asia Pacific, Middle East & Africa, South & Central America
Country Scope
This text is related
to country scope.
The List of Companies
1.RF Globalnet
2.Aixtron
3.EpiGaN nv
4.SweGaN
5.NTT Advanced Technology Corporation
6.Infineon Technologies AG
7.Mitsubishi Electric Corporation
8.Toshiba Infrastructure Systems and Solutions Corporation
9.Koninklijke Philips N.V.
10.ALLOS Semiconductors GmbH
1.RF Globalnet
2.Aixtron
3.EpiGaN nv
4.SweGaN
5.NTT Advanced Technology Corporation
6.Infineon Technologies AG
7.Mitsubishi Electric Corporation
8.Toshiba Infrastructure Systems and Solutions Corporation
9.Koninklijke Philips N.V.
10.ALLOS Semiconductors GmbH
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