GaN Epitaxial Wafers Market Forecast to 2028 - COVID-19 Impact and Global Analysis By Product Type (GaN Homoepitaxial Epitaxial Wafer, GaN Heteroepitaxial Epitaxial Wafer); Wafer Size (2-Inch Wafer, 4-Inch Wafer, 8-Inch and Above Wafe); Application (LEDs, Lasers, Radio Frequency Devices, Power Drives, Transistors, Others); End-user Industry (IT and Telecommunications, Industrial, Automotive, Renewable, Consumer Electronics, Military, Defense and Aerospace, Medical and Healthcare, Others) and Geography
Report Code: TIPRE00026894
| No. of Pages: 150
| Category: Electronics and Semiconductor
| Status: Upcoming
A wafer of semiconducting material formed through epitaxial growth (epitaxy) for application in photonics, microelectronics, spintronics, or photovoltaics is known as an epitaxial wafer. Gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminium, nitrogen, phosphorus, or arsenic make up the epitaxial layers. GaN Substrate's primary advantages are high electron mobility, reduced switching losses, and fewer lattice mismatches, which are driving its usage in fields including power electronics and optoelectronics.
Due to its ability to work at high frequency and high temperature, GaN is widely used in radio frequency devices, light-emitting diodes (LEDs), and power electronics. The market for GaN epitaxial wafers is being boosted by the increasing popularity of LEDs. Furthermore, advances in GaN technology have resulted in the creation of efficient GaN substrates with low defect density and free macro defects. As a result, GaN substrates are increasingly being used to make LEDs with wafer diameters ranging from 2 inches to 6 and 8 inches. During the forecast period, the GaN epitaxial wafers market is expected to rise due to the increasing adoption of LEDs.
The "Global GaN Epitaxial Wafers Market Analysis to 2028" is a specialized and in-depth study of the GaN Epitaxial Wafers Market with a special focus on the global market trend analysis. The report aims to provide an overview of the GaN Epitaxial Wafers Market with detailed market segmentation by product type, wafer size, application, end-user industry, and geography. The global GaN Epitaxial Wafers Market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading GaN Epitaxial Wafers Market players and offers key trends and opportunities in the GaN Epitaxial Wafers Market.
The global GaN Epitaxial Wafers Market is segmented on the basis of product type, wafer size, application, end-user industry. On the basis of product type, the market is segmented into GAN homoepitaxial epitaxial wafer and GAN heteroepitaxial epitaxial wafer. Based on wafer size the market is segmented into the 2-inch wafer, 4-inch wafer, and 8-inch and above wafer. Based on application the market is segmented into LEDs, lasers, radiofrequency devices, power drives, transistors, and others. Based on the end-user industry, the market is segmented into IT AND telecommunications, industrial, automotive, renewable, consumer electronics, military, defense and aerospace, medical and healthcare, and others.
The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global GaN Epitaxial Wafers Market based on various segments. It also provides market size and forecast estimates from year 2017 to 2028 with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America. The GaN Epitaxial Wafers Market by each region is later sub-segmented by respective countries and segments. The report covers analysis and forecast of 18 countries globally along with current trend and opportunities prevailing in the region.
The report analyzes factors affecting GaN Epitaxial Wafers Market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors effecting the GaN Epitaxial Wafers Market in these regions.
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The reports cover key developments in the GaN Epitaxial Wafers Market as organic and inorganic growth strategies. Various companies are focusing on organic growth strategies such as product launches, product approvals and others such as patents and events. Inorganic growth strategies activities witnessed in the market were acquisitions, and partnership & collaborations. These activities have paved way for expansion of business and customer base of market players. The market players from GaN Epitaxial Wafers Market are anticipated to lucrative growth opportunities in the future with the rising demand for GaN Epitaxial Wafers Market. Below mentioned is the list of few companies engaged in the GaN Epitaxial Wafers Market.
The report also includes the profiles of key GaN Epitaxial Wafers Market companies along with their SWOT analysis and market strategies. In addition, the report focuses on leading industry players with information such as company profiles, components and services offered, financial information of last 3 years, key development in past five years.
ALLOS Semiconductors GmbH
Infineon Technologies AG
Koninklijke Philips N.V.
Mitsubishi Electric Corporation
NTT Advanced Technology Corporation
Toshiba Infrastructure Systems and Solutions Corporation
The Insight Partner's dedicated research and analysis team consist of experienced professionals with advanced statistical expertise and offer various customization options in the existing study.
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The List of Companies
5.NTT Advanced Technology Corporation
6.Infineon Technologies AG
7.Mitsubishi Electric Corporation
8.Toshiba Infrastructure Systems and Solutions Corporation
9.Koninklijke Philips N.V.
10.ALLOS Semiconductors GmbH